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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 12

An Analysis Of The Kink Phenomena In Inalas/Ingaas Hemt'S Using Two-Dimensional Device Simulation (Article)
Subject: Fet'S , Indium Materials/Devices , Modfets
Author: T. Suemitsu      Takatomo Enoki      N Sano     
page:      2390 - 2399
Low-Frequency Noise Of Inp/Ingaas Heterojunction Bipolar Transistors (Article)
Subject: Low-Frequency , Heterojunctions , Transistor Array
Author: Yoshifumi Takanashi      H Fukano     
page:      2400 - 2406
Interfacial Gate Resistance In Schottky- Arrier-Gate Field-Effect Transistors (Article)
Subject: Gate Resistance , Mesfets , Modeling , Skin Effect
Author: Hans Rohdin      Nick Moll      Gregory S. Lee     
page:      2407 - 2416
Gainp/Aifaas/Gainp Double Heterojunction Bipolar Transistors With Zero Conduction Band Spike At The Collector (Article)
Subject: Gain , Bipolar , Spike Analysis
Author: Beng-Chye Lye      P. A. Houston      C. C. Button     
page:      2417 - 2421
Enhancement-Mode High Electron Mobility Transistors (E-Hemt'S) Lattice-Matched To Inp (Article)
Subject: Dcfl , Enhancement Mode Fet , Modfets
Author: Aaditya Mahajan      Mohamed Arafa      P. Fay     
page:      2422 - 2429
Device Parameter Optimization Of Straned Si Channel Sige/Si N-Modfet'S Using A One-Dimensional Charge Control Model (Article)
Subject: Modeling , Modfet , Sige , Simulation
Author: George Halkias      Aliki Vegiri     
page:      2430 - 2436
Analysis Of Si Ge Heterojunction Integrated Injection Logi (I2l) Structures Using A Stored Stored Charge Model (Article)
Subject: Analysis , Heterojunctions , Injection
Author: Simon P. Wainwright      Stephen Hall      Peter Ashburn     
page:      2437 - 2447
Design Methodology And Optimization Of Gate-Driven Nmos Esd Protection Circuits In Submicron Cmos Processes (Article)
Subject: Design , Optimization , Circuits , Submicron
Author: Julian Zhiliang      Ajuth Amerasekera      Charvaka Duvvury     
page:      2448 - 2456
Emitter Series Resistance From Open-Collector Measurements Influence Of The Collector Region And The Parasitic Pnp Transistor (Article)
Subject: Bipolar , De Morgan'S Modus Ponens , Epitaxial Layers
Author: Reinhard Gabl      Michael Reisch     
page:      2457 - 2465
Read-Disturb And Endurance Of Ssi-Flsh E2prom Devices At High Operating Temperatures (Article)
Subject: Flash Eeprom , High Temperature , Trap Generation
Author: Jan De Blauwe      Dirk Wellekens      Sadaqat Naveed     
page:      2466 - 2474
Low-Frequency Drain Current Noise Behavior Of Inp Based Modfet'S In The Linear And Stauration Regime (Article)
Subject: Indium Compounds , Modfets , Noise
Author: M. Valenza      Hans Van Meer      Eddy Simoen     
page:      2475 - 2482
A C-Switch Cell For Low-Voltage And High-Density Sram'S (Article)
Subject: Single-Phase , Sram , C-Switch
Author: Hirotada Kuriyama      M. Ishigaki      Shouichi Miyamoto     
page:      2483 - 2488
A Compact Ldd Mosfet I-V Model Based On Nonpinned Surface Potential (Article)
Subject: Model , Ldd Mosfet , Nonpinned Surface Potential
Author: Sheng-Lyang Jang      Shau-Shen Liu      G. J. Sheu     
page:      2489 - 2498
Quantify Neutral Base Recombination And The Effects Of Collector Junction Traps In Uhv/Cvd Sige Hbt'S (Article)
Subject:
Author: Guofu Niu      John D Cressler      Alvin J. Joseph     
page:      2499 - 2504
Random Dopant Induced Threshold Voltage Lowering And Fluctuations In Sub-0.1 Mosfet'S A 3-D "Atomistic" Simulation Study (Article)
Subject: Fluctuations , Mosfet , Numerical Simulation
Author: Asen Asenov     
page:      2505 - 2513
Kink-Free Polycrystalline Dilicon Double-Gate Elevated-Channel Thin-Film Transstors (Article)
Subject: Amlcd , Ectft , Polycrystalline Silicon
Author: Anish Kumar K.P.      Johnny K O Sin      Cuong T. Nguyen     
page:      2514 - 2520
A Degenerately-Doped Gaas Schottky Diode Model Applicable For Terahertz Frequency Regime Operation (Article)
Subject: Device Simulation , Schottky-Diode , Transport
Author: Boris L. Gelmont      Dwight L. Woolard      Thomas W. Crowe     
page:      2521 - 2527
Bulk Defect Induced Low-Frequency Noise In N P Silicon Diodes (Article)
Subject: Charge Carrier Processes , Diodes , Semiconductor Devices , Trapping
Author: Fan-Chi Hou      Eddy Simoen      C Claeys     
page:      2528 - 2536
Igbt Dynamics For Clamped Inductive Switching (Article)
Subject: Dynamic , Clamped Semiconductor Optical Amplifiers , Switch
Author: Malay Trivedi      Krishna Shenai     
page:      2537 - 2545
Mosfet For Deep Submicron Ulsi Technology (Article)
Subject: Asymmetric Mosfet , Asymmetric Spacer , Mosfet Scaling
Author: Xing Zhou      Wei Long     
page:      2546 - 2547
Transistor With A Silicon Nitride Gate Insulator (Article)
Subject: Performance
Author: K.-H. Lee      J. K. Park      Jin Jang     
page:      2548 - 2550
Tunneling Through Ultrathin Gaas Barrier Grown By Molecular Layer Epitaxy (Article)
Subject: Effective Tunnelling Width , Molecular Layer Epitaxy (Mle) , Ultrathin Barrier
Author: Yong Liu      Ken Suto      Yutaka Oyama     
page:      2551 - 2558